Diode Sputtering

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In diode sputtering, an electric potential difference is applied between the target and the substrate to form a plasma discharge inside a low vacuum chamber. The free electrons in the plasma are immediately removed from the negative potential electrode (cathode). These accelerating electrons collide with neutral gas atoms (Argon) in their path, causing the electrons in the shell of these atoms to separate. As a result, the gas atoms become positive ions and accelerate towards the cathode, causing the sputtering phenomenon. Glow discharge occurs when some of the positive ions return to their ground state by adsorbing free electrons and releasing photons.

This mechanism is called Diode Sputtering and the applied voltage can be DC (with constant poles) or RF (with alternating poles), depending on the target material. One of the problems with this method is that its coating rate is low and it takes longer to do the coating, which causes the target to heat up and damage its atomic structure, which is improved utilizing Magnetron Cathodes.

Materials
Sputtering Targets

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Sputtering Targets
for Semiconductor Applications

Sputtering targets must meet ever tougher standards for high quality to produce sub-micron scale and wafer targets in ever larger sizes.
- Low particle
- Good film uniformity
- High usage efficiency
To develop and produce high quality sputtering targets, Ulvac carefully evaluates which manufacturing method to use for each material to meet the following product quality goals.

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